Ferroelectric random access memory device and control method thereof

ABSTRACT

There are provided a ferroelectric RAM (Random Access Memory) device and a control method thereof. In the device, a data input buffer circuit senses a transition of input data and generates a data transition detection signal. Further, a plate pulse generator generates a single pulse to store first logic data among applied data at an enable section of a plate line, and to store second logic data opposite to the first logic data at a disable section of the plate line, where the single pulse enables the plate line connected to a memory cell in response to the data transition detection signal and then disables it after lapse of a given time. Thus, a stabilized write operation can be provided and a control of the ferroelectric RAM device can be simplified.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the priority of Korean Patent Application NO.10-2004-0008600, filed on Feb. 10, 2004, in the Korean IntellectualProperty Office, the disclosure of which is incorporated by referenceherein in its entirety.

BACKGROUND

1. Technical Field

The present invention relates to semiconductor memory devices, and moreparticularly, to a ferroelectric random access memory device and acontrol method thereof, to provide a stabilized write operation.

2. Discussion of the Related Art

To overcome the refresh limit necessary for a large capacity DRAM(Dynamic Random Access Memory), a ferroelectric thin layer is applied toa dielectric layer of a capacitor. A ferroelectric Random Access Memory(FRAM), using such a ferroelectric thin layer, is a kind of nonvolatilememory device that has the advantage of remembering storage informationeven when there is a power loss, operates at a high-speed and at reducedpower consumption reduction. Such a ferroelectric memory is expected tobe used as a main memory device or a record medium to record sound orimage, in various electronic instruments and equipments having filestorage and detection functions such as portable computer, cellularphone and game machines etc.

In such a ferroelectric RAM device, a memory cell is constructed of aferroelectric capacitor and an access transistor, which store logic data‘1’ or ‘0’ in conformity with an electric polarization state of aferroelectric capacitor.

FIG. 1 illustrates a general hysteresis curve for ferroelectric materialconstituting a ferroelectric memory cell. The curve assumes that betweenthe two electrodes of the ferroelectric capacitor a voltage is appliedto the ferroelectric material, wherein the electrode of the capacitorconnected to a plate line is the positive electrode, and the other, thenegative electrode; in the hysteresis curve the X axis indicates thevoltage applied to both ends of the capacitor, and the Y axis indicatesthe quantity of charge excited to the surface by a spontaneouspolarization of the ferroelectric material, that is, a polarization(μC/cm²).

Referring to FIG. 1, if a ground voltage Vss or 0V is applied and noelectric field is applied to the ferroelectric material, a polarizationis not generated. When the voltage across both ends of the ferroelectriccapacitor increases in a plus direction, a polarization or chargequantity increases from zero to a state point A within the positivepolarization region. At the state point A a polarization is generated toone direction, and a polarization of the state point A becomes a maximumvalue. At this time, a polarization, namely a charge quantity, is keptin the ferroelectric material, and is marked as +Qs. After that, even ifthe voltage across both ends of the capacitor falls to the groundvoltage Vss, the polarization is not lowered to zero but remains at astate point B. For this residual polarization, the charge volume kept inthe ferroelectric material is represented as +Qr. Next, if the voltageacross both ends of the capacitor increases in a minus direction, thepolarization is changed from a state point B to a state point C, withinthe negative charge polarization region. At the state point C,ferroelectric material is polarized to a direction opposite to thepolarization direction of the state point A. This polarization isrepresented as −Qs. Then, even if the voltage across both ends of thecapacitor again falls to a ground voltage Vss, the polarization does notfall to zero but remains at a state point D. This residual polarizationis represented as −Qr. When the voltage applied across both ends of thecapacitor again increases to a plus direction, the polarization of theferroelectric material is changed from the state point D to the statepoint A.

As above, if a voltage for generating an electric field is applied onceto a ferroelectric capacitor, where ferroelectric material is insertedbetween the two electrodes, a polarization direction based onspontaneous polarization is maintained even if the electrodes are in afloating state. The surface charge of ferroelectric material, throughthe spontaneous polarization, is not naturally lost by leakage etc. If avoltage is not applied in an opposite direction so that a polarizationbecomes zero, the polarization direction is maintained intact.

When a voltage is applied in a plus direction to the ferroelectriccapacitor and is then removed, The residual polarization of theferroelectric material constituting the ferroelectric capacitor becomesa +Qr state. When a voltage is applied in a minus direction to theferroelectric capacitor and is then removed, the residual polarizationof the fertoelectric material becomes a −Qr state. Here, if assumingthat a logic state at the +Qr state of residual polarization indicatesdata ‘0’, the logic state at the −Qr state of residual polarizationindicates data ‘1’.

FIG. 2 illustrates memory cells constituting a memory cell array of aconventional ferroelectric RAM device. A memory cell is constructed fromone access transistor N1 and one ferroelectric capacitor C1. The accesstransistor N1 includes two terminals, a source and a drain, connectedbetween one electrode of the ferroelectric capacitor C1 and a bit lineB/L. The gate of the access transistor N1 is connected to a word lineW/L. Another electrode of the ferroelectric capacitor C1 is connected toa plate line P/L.

A plurality of memory cells is arranged into rows and columns,constituting a cell array. Read and write operations in such aferroelectric RAM device are performed by controlling pulses that areapplied to the ferroelectric memory cell.

To guarantee a stabilized write operation in such a ferroelectric RAMdevice, the time to write respective data should be ensured. Thus, asection to write data ‘0’ and a section to write data ‘1’ are eachdetermined to exist separately within one cycle. Mainly, the section towrite data ‘0’ is first determined and then the section to write data‘1’ is determined. Particularly, in a ferroelectric RAM device having anasynchronous operation, one cycle operation is controlled by an addresstransition detection (ATD) signal, so as to perform a write operation.

FIG. 3 illustrates a timing diagram for the operation of a ferroelectricRAM device according to the prior art. Here an external chip enablesignal CEB maintains a low level when in an enable state, and in thisstate an address signal XADD is applied from the outside. A transitionof the address signal is sensed, generating the address transitiondetection signal ATD, and an internal chip enable signal ICE isgenerated by the address transition detection signal ATD. When the ICEis generated, a word line W/L is enabled by a word line decoder anddriver circuit. Also, a plate line P/L is enabled in response to theICE. When the plate line P/L is enabled, a read section I starts onoperation. A voltage corresponding to data stored in a memory cell isexcited to a bit line B/L maintaining a ground voltage state. Next, asense amplifier enable signal SAP is generated, in response to theenable signal of the plate line, to enable a sense amplifier. When thesense amplifier is enabled, the read section I is completed. The nextsection is write section II for writing data ‘0’. In this section whenthe data signal DATA is later inputted from the outside, the signal DATAis excited to the bit line B/L. If the data excited to the bit line B/Lis ‘0’, the voltage of the bit line maintains a ground voltage state.Thus, data ‘0’ is written by a voltage difference between plate line P/L(having an enable state) and the bit line B/L (having a ground voltagestate). Meanwhile, if the data excited to the bit line B/L is ‘1’, thevoltage of the bit line maintains a power source voltage state; thus,since there is no voltage difference between the plate line P/L (havingan enabled state) and the bit line B/L, nothing is generated. The writeoperation of the data ‘0’ is performed before the plate line P/L isdisabled, which occurs after the generation of the sense amplifierenable signal once a given time has lapsed. The subsequent section,between the plate line P/L being disabled and the sense amplifier beingdisabled, is provided as a write section III for writing data ‘1’. Inthis section when the voltage of the bit line B/L has a power sourcevoltage level, by virtue of the voltage corresponding to data ‘1’excited to the bit line B/L, and the plate line P/L maintains a disablesate the data ‘1’ is stored at a memory cell by the voltage differencebetween the bit line B/L and the plate line P/L. When the writeoperation is completed, the bit line B/L is precharged and the signalICE is disabled.

In the conventional ferroelectric RAM device when performing such awrite operation, a plate line P/L is enabled and after a lapse of timecorresponding to the read section I, a sense amplifier is enabled. Afterthe enabling of the sense amplifier, time lapses corresponding to thewrite section II for writing data ‘0’, and then the plate line P/L isdisabled. After the disabling of the plate line P/L, time correspondingto the write section III for writing data ‘1’ lapses and then the senseamplifier is disabled.

In the conventional ferroelectric RAM device, read and write cycle timeis mainly decided by these sections. When the respective sections becomeequal to one another by a given time, there are advantages of reducing acycle time and having the same cycle time, thereby simplifying a controloperation of ferroelectric memory. However, data to be written in amemory cell should be inputted within the write section II of data ‘0’at least. If the data is inputted later or if there is not enough timefor writing data, even if inputted within the write section II of thedata ‘0’, a failure will occur since the data cannot be stored in thememory cell.

FIG. 4 is a timing diagram illustrating write operations in aferroelectric RAM device having a long cycle according to the prior art,where the operation of the ferroelectric RAM device is similar to FIG.3. However, in the case of a write operation during the long cycle, theprobability of a failure occurring is higher than that of theferroelectric RAM device having a short cycle similar to FIG. 3. Forexample, data may be inputted after the write section II for writingdata ‘0’ or after the write section III for writing data ‘1’. In thiscase, the inputted data cannot be written or undesired data is writtenin the memory cell, causing a failure.

FIGS. 5 and 6 are timing diagrams illustrating write operations in aconventional ferroelectric RAM device attempting to overcome problemsdepicted in FIG. 4.

FIG. 5 depicts a timing diagram illustrating the operation of aconventional ferroelectric RAM device to ensure a write section bydisabling a plate line P/L in response to an address transitiondetections signal ATD of the next cycle. The read section I, in whichthe plate line P/L is enabled and the sense amplifier is enabled, is thesame or similar to the operation depicted in FIG. 4. Meanwhile, thewrite section II for writing data ‘0’ starts on an operation when thesense amplifier is enabled, and becomes continuous till the plate lineP/L is disabled by the ATD generated by sensing the address signal ofthe next cycle, instead of disabling the plate line P/L after the senseamplifier is enabled and then a given time lapses. Within this writesection II of the data ‘0’, the write section of the actual data ‘0’ isa section that starts from the time of a data input to the disablingtime of the plate line. The lapse of time occurring after the disablingof the plate line P/L corresponds to the write section III of data ‘1’,after which the sense amplifier is disabled, and the write section IIIof the data ‘1’ exists within the next cycle.

FIG. 6 is a timing diagram for operations of a conventionalferroelectric RAM device to ensure a write section by independentlyenabling a plate line P/L through use of a write enable signal WEB. Theread section I, in which the plate line P/L is enabled and the senseamplifier is enabled, is equivalent to the operation of FIG. 4. That is,after the plate line P/L is enabled and the time corresponding to theread section I lapses, a sense amplifier is enabled. After the enablingof the sense amplifier and the subsequent lapse of a given time, theplate line P/L is disabled. At this section, the plate line P/L is againenabled independently by an applied write enable signal WEB, regardlessof the state, disabled or enabled, of the plate line P/L. The plate lineP/L consecutively maintains an enable state till the plate line P/L isdisabled by an address transition detection signal ATD, generated bysensing the address signal of the next cycle. Thus, the section wherethe sense amplifier is enabled and then the plate line P/L is disabledby the address transition detection signal, becomes the write section IIof data ‘0’. Within this write section II of the data ‘0’, a writeoperation of the actual data ‘0’ is performed from the time when thedata signal DATA is applied. After the disabling of the plate line P/Land a subsequent lapse of time corresponding to the write section III ofdata ‘1’, the sense amplifier is disabled, and the write section III ofthe data ‘1’ exists within a next cycle.

In the ferroelectric RAM devices shown in FIGS. 5 and 6, the enablesection of plate line is prolonged, thus the write section II of thedata ‘0’ can be prolonged as well. This provides a stabilized writeoperation of data ‘0’ even if an input of data comes late. In thissystem, however, the write section of data ‘1’ is pushed into the nextcycle by as much as the write section of data ‘0’ is prolonged, thus thewrite cycle time increases and cycle times of read operation and writeoperation become different. The write section of data ‘1’ exists in thenext cycle, thus also increasing the read or write operation cycle thenext applied address signal. In controlling such a ferroelectric RAMdevice mutually different cycle times should be applied in conformitywith a cycle and cycle configuration, thus a control of theferroelectric RAM device becomes complicated. In this case the longestcycle is equally applied to all cycle times to solve such a controlcomplication, thus there is a disadvantage in the speed aspect of thedevice.

SUMMARY OF THE INVENTION

Embodiments of the present invention provide a ferroelectric RandomAccess Memory (RAM) device and a control method thereof, which iscapable of performing a stabilized write operation. Here, read and writecycle times are equal to each other, thereby simplifying a controloperation of the ferroelectric RAM device. Further, all write operationsare performed in one cycle time so as to reduce write cycle time.

An aspect of the present invention provides a ferroelectric RAM devicefor performing a write operation of storing data at a ferroelectricmemory cell that is constructed of a ferroelectric capacitor and anaccess transistor. The ferroelectric RAM device includes a data inputbuffer circuit for sensing a transition of input data and generating adata transition detection signal; and a plate pulse generator forgenerating a pulse that enables a plate line connected to a memory cellin response to the data transition detection signal and then disables itafter lapse of a given time, and for storing first logic data amongapplied data at an enable section of the plate line, and storing secondlogic data opposite to the first logic data at a disable section of theplate line.

The pulse generated by the data transition detection signal on the plateline is generated independently regardless of whether the plate line isenabled or disabled, and the enable section of the plate line may be asection having time enough to store data at the memory cell. Further,the first logic data may be data ‘0’ and the second logic data may bedata ‘1’.

Another aspect of the present invention provides a control method of aferroelectric RAM device for performing a write operation of storingdata at a ferroelectric memory cell that is constructed of aferroelectric capacitor and an access transistor. The method includesgenerating a data transition detection signal by sensing a transition ofdata inputted from the outside after an address signal is applied. Italso includes generating a plate line enable signal in response to thedata transition detection signal and enabling a plate line connected tothe memory cell. Storing a first logic data among input data at thememory cell, at an enable section of the plate line. Disabling the plateline. Storing a second logic data opposite to the first logic data,among input data, at the memory cell, at a disable section of the plateline.

The method may further include generating an enable signal on the plateline in response to an address transition detection signal that isoutputted by sensing a transition of the address signal, before theplate line is enabled in response to the data transition detectionsignal. It may further include enabling the plate line in response to awrite enable signal applied from the outside.

The systematic and methodic configuration according to exemplaryembodiments of the present invention provides a stabilized writeoperation and simplifies a control operation of ferroelectric RAMdevice. Further, a write operation is completed in one cycle time,thereby reducing a write cycle time.

BRIEF DESCRIPTION OF THE DRAWINGS

Exemplary embodiments of the invention are described with reference tothe accompanying drawings, of which:

FIG. 1 is a graph that illustrates a hysteresis curve of generalferroelectric material;

FIG. 2 is a schematic diagram of a memory cell constituting aconventional ferroelectric memory cell array;

FIG. 3 is a timing diagram for write operations in a conventionalferroelectric RAM device;

FIG. 4 is a timing diagram for write operations in a conventionalferroelectric RAM device having a long cycle;

FIG. 5 is a timing diagram for write operations in a conventionalferroelectric RAM device provided to overcome problems depicted in FIG.4;

FIG. 6 is a timing diagram for write operations in a conventionalferroelectric RAM device provided to overcome problems depicted in FIG.4;

FIG. 7 is a block diagram illustrating a ferroelectric RAM deviceaccording to an exemplary embodiment of the present invention;

FIG. 8 is a block diagram of a plate pulse generator in accordance withthe present invention;

FIG. 9 is a timing diagram depicting operation of an exemplaryembodiment of the present invention;

FIG. 10 is a timing diagram depicting operation of an exemplaryembodiment of the present invention;

FIG. 11 is a timing diagram depicting operation of an exemplaryembodiment of the present invention;

FIG. 12 is a timing diagram for depicting operation of an exemplaryembodiment of the present invention; and

FIG. 13 is a timing diagram depicting operation of an exemplaryembodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

FIG. 7 is a block diagram of a ferroelectric Random Access Memory (RAM)device according to an exemplary embodiment of the present invention.The ferroelectric RAM device includes an address buffer 110, an addresstransition detection signal generator 130, a memory cell array 140, aplate pulse generator 160, a decoder circuit 120, a sense amplifier 150,a read/write driver 170, a data input/output buffer circuit 200, anexternal chip enable buffer circuit (CE buffer) 181, a write enablebuffer circuit (WE buffer) 182 and an output enable buffer circuit (OEbuffer) 183 etc.

The address buffer 110 receives an applied external address signal XAi,and transfers an address signal Ai to the decoder 120. It also detectsan address transition and generates ATDi signals corresponding to thatthe address transition.

The address transition signal generator 130 detects the addresstransition, adds up the ATDi signals, and generates an addresstransition detection signal ATD.

The memory cell array 140 is configured in such a way that memory cellsare each connected with a plate line, a word line and a bit line, atrows and columns. The memory cells are each constructed of oneferroelectric capacitor and one access transistor and store data. Theplate pulse generator 160 receives an address transition detectionsignal ATD, a write enable signal WEB and a data transition detectionsignal DTD applied from a data input buffer 200. It independentlygenerates a pulse, corresponding to the input, that enables or disablesa plate line. The decoder circuit 120 decodes an address signal Aiapplied from the address buffer circuit 110, and generates a word lineenable signal W/L selecting a specific memory cell corresponding to theaddress signal. The sense amplifier 150 is operated by a sense amplifierenable signal SAP, generated after a plate line P/L is enabled first. Itboth senses and amplifies data inputted from the outside, and excites itto a bit line B/Li. The read/write driver 170 amplifies read data, whenreading, and sends it to an output buffer. When writing it transfersdata inputted, in response to the generation of a write enable signalWEB, to the sense amplifier 150. The data input/output buffer circuit200 performs a data input/output with a sense amplifier, and a datainput buffer circuit thereof senses a transition of data inputtedthrough an input/output buffer circuit 190 from the outside. It alsogenerates a data transition detection signal DTD and applies it to theplate pulse generator 160. The external chip enable buffer circuit (CEbuffer) 181, the write enable buffer circuit (WE buffer) 182 and theoutput enable buffer circuit (OE buffer) 183 transfer an external chipenable signal XCEB, a write enable signal XWEB and an output enablesignal XOEB, respectively inputted from the outside, to the plate pulsegenerator 160. It also transfers an internal chip enable signalcorresponding to an applied address transition detection signal ATD orthe address transition detection signal ATD itself to the plate pulsegenerator 160.

FIG. 8 is an internal block diagram of an exemplary embodiment of aplate pulse generator 160, in accordance with the present invention,constituting a ferroelectric RAM device as depicted in FIG. 7. The platepulse generator 160 is configured so that each plate line enable signalis applied to a plate line through a logic OR gate 164 in response to awrite enable signal WEB and a data transition detection signal DTD,where the plate line enable signal is generated through control paths161, 162 and 163. Thus, the plate line enable signals generated in theplate pulse generator 160 are generated individually and independently.They are not affected by an already generated plate enable signal or alater generated plate enable signal, and are each applied to a plateline P/L. The plate line enable signals may also be generatedsimultaneously. Further, a plate line enable signal generated inresponse to a write enable signal WEB and data transition detectionsignal DTD can have a pulse type where an enable state is maintained fora time long enough to store data. An enable section of the pulse may beabout 10 to 15 ns.

In particular, a plate enable signal applied to a plate line in responseto the data transition detection signal DTD has a single pulse type toenable a plate line connected to a memory cell and then to disable itafter a given time lapse. Then a write operation is executed. That is,at an enabled section of the plate line, data ‘0’ as a first logic dataamong applied data is stored, and at a disabled section of the plateline P/L, data ‘1’ as second logic data opposite to the first logic datais stored. A pulse generated by the data transition detection signal DTDis controlled and generated after a first enabled time of the plateline, which is enabled by a plate line enable signal that is generatedin response to the address transition detection signal ATD or writeenable signal WEB.

FIGS. 9 to 13 are exemplary timing diagrams illustrating operationexamples of a ferroelectric RAM device according to exemplaryembodiments of the present invention.

FIG. 9 illustrates an exemplary embodiment, in accordance with thepresent invention, of a write operation for a case that a write enablesignal WEB is previously enabled, a plate line P/L enabled by an addresstransition detection signal ATD is disabled and then data is inputted.An external chip enable signal CEB is maintained as an enable state in alow level, and in this state, an address signal XADD is applied from theoutside. A transition of the address signal XADD is sensed and anaddress transition detection signal ATD is generated. An internal chipenable signal ICE is generated by the address transition detectionsignal ATD. When the internal chip enable signal ICE is generated, aword line W/L is enabled by a word line decoder and driver circuit.Also, a plate line P/L is enabled in response to the internal chipenable signal ICE or the address transition detection signal ATD.

When the plate line P/L is enabled, a read section I starts onoperation. A voltage corresponding to data stored in a memory cell isexcited to a bit line B/L maintaining a ground voltage state. Next, whenthe time corresponding to the read section I lapses after an enablesignal of the plate line P/L is generated. A sense amplifier enablesignal SAP is generated and enables a sense amplifier. When the senseamplifier is enabled, the operation of the read section I is completed,and the sense amplifier senses and amplifies data excited to the bitline B/L.

When the sense amplifier is enabled, the plate line P/L is disabled inresponse. The time interval between the enabling of the sense amplifierand the disabling of the plate line P/L is, after the generation of awrite enable signal WEB, the write section II′ of optional data ‘0’.When data ‘0’ is inputted from the outside during this section II′, thedata ‘0’ is stored at a memory cell. The section from the disabling ofthe plate line P/L to an input of data from the outside is the writesection III′ of optional data ‘1’, and when data ‘1’ is inputted fromthe outside, the data ‘1’ is stored. In the case that desired data fromthe outside is not inputted during the optional data write sections II′and III′ undesired optional data is stored, or a data initially storedat the memory cell is maintained.

When the data signal DATA is inputted from the outside after the plateline P/L is disabled, a transition of the data is detected and a datatransition detection signal DTD is generated. Also a single pulse forenabling the plate line only for a given time is generated in responseto the data transition detections signal DTD, and the plate line P/L isenabled by the pulse. The time interval beginning from the enabling ofthe plate line P/L to the disabling of the plate line P/L is the writesection II of data ‘0’ among the inputted data. Data signal DATAinputted from the outside is amplified in a sense amplifier and isexcited to a bit line B/L. If the data excited to the bit line B/L is‘0’, the voltage of the bit line B/L maintains a ground voltage state.Thus, data ‘0’ is written by the voltage difference between the bit lineB/L and the enabled plate line P/L. Meanwhile, if the data excited tothe bit line B/L is ‘1’, the voltage of the bit line B/L maintains apower source voltage state. Hence, there is no a voltage difference dueto the enabled plate line P/L and so any no operation occurs.

When the plate line P/L is enabled during the write section II of thedata ‘0’ and then is again disabled by the pulse, the write section IIIof data ‘1’ starts on operation. At the write section of data ‘1’, avoltage of bit line B/L has a power source voltage level by a voltagecorresponding to data ‘1’ excited to a bit line B/L, and the plate lineP/L maintains a disabled sate, thus data ‘1’ is stored at a memory cellby the voltage difference between the bit line B/L and the plate lineP/L. The write section of the data ‘1’ is completed when the senseamplifier is disabled by an address transition detection signal ATD asthe transition of the address signal XADD of the next cycle is sensed.

As described above, when the write operation of data is completed, thebit line B/L is precharged and the internal chip enable signal ICE isdisabled.

According to the exemplary embodiment depicted in FIG. 9, a sufficientwrite time can be ensured by generating a plate enable signal throughuse of a data transition detection signal DTD, thereby obtaining astabilized write operation. The write operation is completed in onecycle time contrary to conventional techniques.

FIG. 10 is a timing diagram illustrating an exemplary embodiment, inaccordance with the present invention, of a write operation in the casewhere a plate line P/L is enabled by an address transition detectionsignal ATD and is subsequently disabled after the lapse of a given time,after which a write enable signal WEB is applied immediately before theexternal data is inputted. The operation of the read section I isequivalent to the description of FIG. 9. Since a write enable signal WEBis not applied at sections II′ and III′, which occur immediately afterread section I and immediately before the generation of the write enablesignal WEB, a write-back or restoring operation is executed. Thewrite-back or restoring operation restores the polarization generated bythe read operation of the read section I to an originally stored data.The write-back or restoring operation, sections II′ and III′, iscompleted in when the write enable signal WEB is applied.

When the write enable signal WEB is applied, a plate line P/L is againenabled and is maintained as the enable state for a given time t2. Here,after the write enable signal WEB is applied and before data signal DATAis inputted, there may exist a write section II″ of optional data ‘0’,which is capable of storing optional data ‘0’ existing on a data line.

The plate line P/L is maintained is the enable state, and in this state,write data signal DATA from the outside is inputted. A transition of thedata signal DATA is detected and a data transition detection signal DTDis generated. A single pulse is generated to enable the plate line onlyfor a given time t2 in response to the data transition detection signalDTD, and the plate line P/L is enabled by the pulse. The subsequentoperations are similar to the description of FIG. 9.

The plate line P/L is enabled by the write enable signal WEB, and then,before the plate line P/L is disabled after a lapse of given time t2,the plate line P/L is again maintained in the enable state for a giventime t2 by an enable signal of the plate line generated in response tothe data transition detection signal DTD. Thus, the write section II ofactual data ‘0’ becomes a section that is from the time when the plateline P/L is enabled by the data transition detection signal DTD to thetime when the plate line P/L is disabled after given time t2. The writesection III of data ‘1’ lasts for a time interval that ranges from thetime when the plate line P/L is disabled to the time when a senseamplifier is disabled by an address transition detection signal ATD ofthe next cycle that is generated by a transition of the address signalXADD of the next cycle.

According to the exemplary embodiment depicted in FIG. 10 describedabove, in the case data is inputted from the outside after the plateline P/L is enabled by a write enable signal WEB, but before the plateline P/L is disabled again; the plate line P/L is enabled by a plateenable signal responding to the data transition detection signal DTD.Thus a sufficient write time can be ensured, obtaining a stabilizedwrite operation. The write operation is completed in one cycle time.

FIG. 11 is a timing diagram for an exemplary embodiment, in accordancewith the present invention, of a write operation in the case where theplate line P/L enabled by an address transition detection signal ATD andis disabled after the lapse of a given time; then the plate line P/L isenabled by a write enable signal WEB applied later and is then againdisabled after lapse of given time t2, and then the external data isinputted.

As shown in FIG. 11, the write enable signal WEB is applied andoperations to an enabling of the plate line are equivalent to thedescription of FIG. 10. The plate line P/L enabled by the applied writeenable signal WEB and is again disabled after lapse of given time t2.When data signal DATA is inputted from the outside after the disablingof the plate line P/L, a transition of the data is detected and a datatransition detection signal DTD is generated. A plate enable signal isgenerated in response to the data transition detection signal DTD, andthis enables the plate line P/L for a given time t2. Subsequentoperations are equivalent to the description of FIG. 10.

The interval, which ranges from the time when a plate line P/L isenabled by the write enable signal WEB to the time when the plate lineP/L is again disabled and is then enabled in response to a datatransition detection signal DTD, contains optional data write sectionsII″ and III″ that are capable of writing undesired data. The section,which ranges from the enabling time of the plate line P/L that isenabled in response to the data transition detection signal DTD to thetime it is disabled after a given time t2, becomes the write section IIof actual data ‘0’. The interval, which ranges from the disabling timeof the plate line P/L after the write section II of the actual data ‘0’to the disabling time of a sense amplifier that has been disabled by theaddress transition detection signal ATD of the next cycle generated by atransition of the address signal XADD of, becomes a write section III ofactual data ‘1’.

According to the exemplary embodiment depicted in FIG. 11, describedabove, the plate line P/L is enabled by the write enable signal WEB, andis then disabled again; then data is inputted from the outside. Here, asufficient write time can be ensured by a plate enable signal respondingto the data transition detection signal DTD, obtaining a stabilizedwrite operation.

FIG. 12 is a timing diagram for an exemplary embodiment, in accordancewith the present invention, of write operations in the case where thereis a change of input data. In this case noise, or another fault, occursand undesired optional data is inputted following which the desired datais inputted. Operations before the write enable signal WEB is applied,are equivalent to the description of FIG. 11.

When the write enable signal WEB is applied, the plate line P/L is againenabled and is maintained in the enabled state for a given time t2.While the enabled state of the plate line P/L is maintained, undesireddata is inputted because of noise or faults from the outside. Even whensuch undesired data is inputted, a transition of the data is detected, afirst data transition detection signal DTDs generated and a single pulsefor enabling the plate line P/L, only for a given time t2, is generatedas well. Thus, the plate line is enabled by the write enable signal WEB,and then, before the plate line is disabled, after a lapse of given timet2, the plate line P/L is again enabled for another given time t2 by theenable signal of the plate line that is generated in response to thefirst data transition detections signal DTD.

Hence, sections II″ and III″ are where undesired data due to noise, etc.are written and the actually desired write data are inputted; this iscontinued to a time when a second data transition signal is generated.Here, the part of section II″, ranging from the enabling time of theplate line P/L that is enabled by the write enable signal WEB to theagain enabled time of the plate line P/L by the first data transitiondetection signal DTD, is a section capable of writing optional data ‘0’that exists on the data line. The part of section II″, between the plateline is again enabled by the first data transition detection signal DTD,wherein the enabled state is maintained continuously and the plate lineP/L being disabled after a given time t2, becomes the write section ofoptional data ‘0’ through noise, etc. in the data line. The writesection III″ of undesired optional data ‘1’ ranges from the timeinterval beginning with the disabling time of the plate line P/L to anenabling time of the plate line P/L that is due to a second datatransition detection signal DTD.

When the plate line P/L is enabled and is again disabled by an input ofundesired data, and then undesired data signal DATA is again inputtedfrom the outside, a transition of the data is detected, generating asecond data transition detection signal DTD. A plate enable signal isgenerated in response to the second data transition detection signalDTD, hence the plate line P/L maintains an enabling state for a giventime t2. Subsequent operations are equivalent to the description of FIG.11.

The time interval, ranging from the again enabled time of the plate lineP/L responding to the second data transition detection signal DTD to adisabling time of the plate line P/L after a given time t2, becomes awrite interval II of actual data ‘0’. The time interval, ranging fromthe disabling time of the plate line P/L after the write interval of thedata ‘0’ to a disabling time of a sense amplifier disabled by an addresstransition detection signal ATD of the next cycle generated by atransition of an address signal XADD of the next cycle, becomes a writesection III of actual data ‘1’.

FIG. 13 is a timing diagram for an exemplary embodiment, in accordancewith the present invention, of a write operation in a case where thereis a change in input data, like that of FIG. 12. The write operation issimilar to the operations of FIG. 12; operations before a write enablesignal WEB is applied, are equivalent to the description of FIG. 12.When the write enable signal WEB is applied, a plate line P/L is againenabled and its enabled state is maintained for a given time t2. Theplate line P/L is disabled after a given time t2 and then undesired datafrom noise or fault is inputted from the outside.

Even if such undesired data is inputted, a transition of the data isdetected, generating a first data transition detection signal DTD andgenerating a single pulse that enables the plate line P/L only for agiven time t2 in response to the first data transition detection signalDTD. Thus, the plate line P/L also maintains an enabled state for agiven time t2 by an enable signal of the plate line generated inresponse to the first data transition detection signal DTD.

When the plate line P/L is enabled by an input of the undesired data,after which it is again disabled and then a desired data signal DATA isinputted, a transition of the data is detected, generating a second datatransition detection signal DTD. A plate enable signal is generated inresponse to the second data transition detection signal DTD, and theplate line P/L maintains an enabled state for a given time t2.Subsequent operations are equivalent to the description of FIG. 12.

Intervals II″ and III″, ranging from the enabled time of the plate lineP/L responding to the write enable signal WEB to the enabling time ofthe plate line P/L that is enabled in response to the first datatransition detection signal DTD, is a write section of undesired dataexisting on a data line. Further, sections II′″ and III′″, in which theplate line P/L is enabled by the first data transition detection signalDTD, after which actually desired write data is inputted and a seconddata transition detection signal is generated thus the plate line P/L isenabled again, are optional data write sections II′″ and III′″ throughnoise etc. inputted from the outside.

The time interval, between the enabling time of the plate line P/L thatis again enabled in response to the second data transition detectionsignal DTD to a disabling time of the plate line P/L after a given timet2, becomes a write section II of actual data ‘0’. The time interval,starting with the disabling time of the plate line P/L after the writesection of the data ‘0’ to a disabling time of the sense amplifierdisabled by an address transition detection signal ATD of the next cyclethat is generated by a transition of an address signal XADD of the nextcycle, becomes a write section III of actual data ‘1’.

According to the exemplary embodiments depicted in FIGS. 12 and 13, incase there is a change in input data, a data transition detection signalDTD is generated at every transition of changed data, and the plate lineP/L is enabled for a given time t2 by the generated data transitiondetection signals DTD, thereby obtaining a stabilized write operationeven for a data change caused by noise or fault.

According to exemplary embodiments of the present invention, it wasdescribed above, that data ‘0’ corresponded to a state point B of thehysteresis loop shown in FIG. 1, and a state point D corresponded todata ‘1’. In the case a plate line was enabled and a bit line voltagewas a ground voltage, data ‘0’ was written and the plate line wasdisabled. In the case a bit line voltage was a power source voltage,data ‘1’ was written. But, those of ordinary skill in the art know thata state point B may correspond to data ‘1’ and a state point D maycorrespond to data ‘0’. Furthermore, it goes without saying that a levelof plate line and bit line may be varied diversely in a write operation.

According to exemplary embodiments of the present invention, atransition of input data is sensed, generating a data transitiondetection signal, and in response to this signal a pulse is generated. Aplate line is independently enabled by the pulse and is disabled after agiven time. Whereby, a write cycle time can be reduced, as compared witha disable system of the plate line using an address transition detectionsignal of a next cycle of a conventional technique, and a stabilizedwrite operation can be obtained. Furthermore, contrary to a conventionaltechnique, operations of data ‘0’ and ‘1’ are completed within one cycletime. Also, read operation and write operation can have the same cycletime. Accordingly, a control system of ferroelectric RAM device can besimplified.

While the present invention has been particularly shown and describedwith reference to exemplary embodiments thereof, it will be understoodby those skilled in the art that various changes in form and details maybe made therein without departing from the spirit and scope of thepresent invention as defined by the appended claims. For example, aninternal construction of the circuit may be varied or internalconfigurative elements of the circuit may be replaced with otherequivalent elements. Accordingly, these and other changes andmodifications are seen to be within the true spirit and scope of theinvention as defined by the appended claims.

1. A ferroelectric Random Access Memory (“RAM”) device that performs awrite operation of storing data in a ferroelectric memory cellconstructed of a ferroelectric capacitor and an access transistor, thedevice comprising: a data input buffer circuit for sensing a transitionof input data and generating a data transition detection signal; and aplate pulse generator for generating a pulse that enables a plate lineconnected to the memory cell in response to the data transitiondetection signal and then disables it after lapse of a given time,wherein a first logic data, among applied data, is stored at an enabledsection of the plate line, and a second logic data, opposite to thefirst logic data, is stored at a disabled section of the plate line. 2.The device of claim 1, wherein the plate pulse generator comprises acircuit for sensing a transition of inputted address signals andgenerating a plate line enable signal in response to an addresstransition detection signal outputted from an address transitiondetection signal generator.
 3. The device of claim 1, wherein the platepulse generator further comprises circuit for enabling the plate line inresponse to a write enable signal and then for disabling it after agiven time lapses.
 4. The device of claim 2, wherein the pulse generatedby the data transition detection signal is generated, after a firstenablement of the plate line, by the plate line enable signal generatedin response to the address transition detection signal after an addresssignal is generated.
 5. The device of claim 4, wherein the pulsegenerated by the data transition detection signal on the plate line isgenerated independently, regardless of whether the plate line has anenabled state or a disabled state.
 6. The device of claim 5, wherein theenable section of the plate line corresponds to time enough to storedata in the memory cell.
 7. The device of claim 6, wherein the firstlogic data is data ‘0’ and the second logic data is data ‘1’.
 8. Thedevice of claim 7, wherein the first logic data is data ‘1’ and thesecond logic data is data ‘0’.
 9. A control method of ferroelectric RAMdevice for performing a write operation of storing data in aferroelectric memory cell that is constructed of a ferroelectriccapacitor and an access transistor, the method comprising: sensing atransition of data after an address signal is applied, and generating adata transition detection signal; generating a plate line enable signalin response to the data transition detection signal and enabling theplate line connected to the memory cell; storing a first logic dataamong input data in the memory cell, at an enabled section of the plateline; disabling the plate line; and storing second a logic data oppositeto the first logic data among input data, in the memory cell, at adisabled section of the plate line.
 10. The method of claim 9, furthercomprising generating an enable signal on the plate line in response toan address transition detection signal that is outputted by sensing atransition of the address signal, before the plate line is enabled inresponse to the data transition detection signal.
 11. The method ofclaim 9, further comprising generating an enable signal on the plateline in response to a write enable signal, before the plate line isenabled in response to the data transition detection signal.
 12. Themethod of claim 9, wherein the plate line enable signal responding tothe data transition detection signal is generated, before the plate lineis enabled in response to a write enable signal and is then disabled.13. The method of claim 9, wherein the plate line enable signalgenerated on the plate line by the data transition detection signal isgenerated independently, regardless of whether the plate line is enabledor disabled.
 14. The method of claim 13, wherein the enable section ofthe plate line corresponds to time enough to store data in the memorycell.
 15. The method of claim 14, wherein the first logic data is data‘0’ and the second logic data is data ‘1’.
 16. The method of claim 15,wherein the first logic data is data ‘1’ and the second logic data isdata ‘0’.
 17. The device of claim 3, wherein the pulse generated by thedata transition detection signal is generated, after a first enablementof the plate line, by the plate line enable signal generated in responsewrite enable signal after an address signal is generated.
 18. The deviceof claim 17, wherein the pulse generated by the data transitiondetection signal on the plate line is generated independently,regardless of whether the plate line has an enabled state or a disablestate.
 19. The device of claim 18, wherein the enable section of theplate line corresponds to time enough to store data in the memory cell.20. The device of claim 19, wherein the first logic data is data ‘0’ andthe second logic data is data ‘1’.
 21. The device of claim 20, whereinthe first logic data is data ‘1’ and the second logic data is data ‘0’.